SBIR/STTR Research Award
ELIMINATION OF EXCESSIVE SURFACE DEFECTS IN GAAS IC MATERIALUSING NON-CONTACT POLISHING
Award amount
$380,000Program and phase
SBIR · Phase IIAward year
1984Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Aracor
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
THE EXTENSION OF A NON-CONTACT POLISHING TECHNIQUE PREVIOUSLY DEVELOPED FOR IT-VI COMPOUNDS, IS PROPOSED FOR (100) GAAS WAFERS INTEGRATED CIRCUIT APPLICATIONS IN MIND. AN INITIAL TASK WILL BE TO CHARACTERIZE SUCH NON-CONTACT POLISHED SURFACES AND COMPARE THEM WITH CONVENTIONALLY POLISHED SURFACES. FOLLOWING SUCCESSFUL DEVELOPMENT OF THE TECHNIQUE, WE WILL INVESTIGATE THE FEASIBILITY OF SCALE-UP FOR POLISHING THREE-INCH WAFER FOR PHASE II IMPLEMENTATION.
Technology keywords
Not reported