PRECURSORS FOR CARBON FREE ALGAAS

WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-VI COMPOUND SEMICONDUCTOR WILL DEPEND ON THE DEVELOPMENT OF ECONOMIC AND HIGH-QUALITY MANUFACTURING METHODS. DURING THE LAST FEW YEARS, ORGANOMETALLIC BASED PROCESSES HAVE EVOLVED INTO THE MOST PROMISING TECHNIQUES FOR THE PRODUCTION OF ULTRA-HIGH PURITY COMPOUND SEMICONDUCTOR MATERIALS IN COMPLEX LAYERED STRUCTURES REQUIRED FOR ADVANCED DEVICES. FEASIBILITY HAS BEEN DEMONSTRATED IN THE LABORATORY; EPITAXIAL LAYERS WITH THE REQUIRED INTERFACE ABRUPTNESS AND CLOSE TO THE REQUIRED PURITY HAVE BEEN OBTAINED FOR THE MATERIALS SYSTEMS OF MAJOR INTEREST, GAAS/ALGAAS AND GAINASP/INP. A MAJOR CHALLENGE NOW CONFRONTS BOTH THE MATERIALS AND CHEMICAL COMMUNITIES. SIGNIFICANT PROGRESS MUST BE MADE IN ALUMINUM PRECURSOR IDENTITY, QUALITY, AND CONSISTENCY. ALUMINUM-CONTAINING FILMS, EVEN P-TYPE LAYERS GROWN WITH ADDUCT PURIFIED TRIMETHYLALUMINUM, STILL CONTAIN UNACCEPTABLY HIGH QUANTITIES OF CARBON. IN PHASE I WE WILL DEMONSTRATE REDUCED CARBON INCORPORATION IN ALGAAS THROUGH THE INTRODUCTION OF A NEW ALUMINUM SOURCE REAGENT. IN PHASE II WE WILL DEVELOP MANUFACTURING METHODS FOR THE PRODUCTION OF ELECTRONIC GRADE MATERIAL.