SBIR/STTR Research Award

High Performance Thin Film Microactuator Materials

Award identifier 48042db9ecb9965312fb5dab93966cfc2dbbe7fbe61e2613b19d8a59efd4e094Awarding agency Department of Defense · Air Force

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

1996

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
Advanced Technologies/Laboratories Intl
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modifications offer the possibility for drastically reduced drive voltages necessary for actuation. A significant opportunity exists to develop a new process for deposition of a thin film microactuator material based on PZT. Metalorganic chemical vapor deposition (MOCVD) is the method of choice because it yields excellent microcrystallinity, has high deposition rates, and scales to large areas. Preliminary results at ATMI indicate that the deposition of high quality substitutionally modified thin films based on PZT is possible by MOCVD. In Phase I, we will develop this process for microactuator applications. Actuation an the piezoelectric coefficients of both unmodified and modified PZT will be measured at Honeywell Technology Center. Phase II will result in a process optimized for microfabricated cantilever devices, which will be fabricated with Honeywell.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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