SBIR/STTR Research Award
SINGLE CRYSTAL SILICON CARBIDE ON SAPPHIRE SUBSTRATES
Award amount
$49,964Program and phase
SBIR · Phase IAward year
1991Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Implant Sciences Corporation
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
THE ADVANTAGES OF SILICON CARBIDE AS A HIGH TEMPERATURE, RADIATION TOLERANT SEMICONDUCTOR MATERIAL ARE WELL KNOWN. UNLIKE COMPARABLE MATERIALS, SUCH AS DIAMOND, PREPARATION OF FUNCTIONAL DEVICES HAS BEEN RELATIVELY STRAIGHT FORWARD WITH THE MAJOR LIMITATION CONTINUING TO BE THE DEFECT DENSITY OF THE SUBSTRATE MATERIAL. A METHOD IS PROPOSED USING ION BEAM SYNTHESIS TO PRODUCE SINGLE CRYSTAL, LOW DEFECT MATERIAL ON A SAPPHIRE SUBSTRATE.
Technology keywords
Not reported