Growth of Bulk Ternary InP1 xAsx Single Crystal Alloys for Optoelectronic Applications

Recent technological advancements in the growth of bulk single crystal, ternary, III-V alloys strongly indicate the potential for commercial feasibility of these alloy substrates. Commercial availability will permit realization of the concept of substrate engineering. Based on reported developments in the (In,Ga)As and (In,Ga)Sb ternary systems, we propose to develop a materials technology for the single crystal growth of InP1-xAsx' to x = 0.4, commensurate with proposed optoelectronic device applications in this materials system. The innovations are: 1) application of novel crystal growth techniques by which the alloy composition, "x" value, is increased by "bootstrapping" onto lattice matched seeds and 2) incorporation of ternary seeds with a growth technology to minimize computational variations which normally occur. In Phase I, we will determine computational and electrical characteristics, develop a wafer fabrication methodology and evaluate crystal quality. Wafers will be provided to Sensors Unlimited (Dr Gregory Olsen-Consultant) who will fabricate and test p/n junction photodetectors. In Phase II we will extend the composition to x = 0.4 and develop techniques to grow crystals in the (100) direction of highly uniform composition. Substrates for fabrication of 2.5um photodetector arrays and strained layer lasers will be provided Sensors Unlimited.