Novel Power Conditioning Concepts

The DOE requires higher power semiconductor switches ¿ particularly Integrated Gate Bipolar Transistors (IGBTs) ¿ for power modulators and power supplies used in future accelerator facilities. This project will develop a means of enhancing the performance of existing IGBTs, most notably by increasing the current-carrying capability of these devices, as well as their switching speeds. This approach also will provide improved device reliability. In Phase I, the devices will be tested and demonstrated in a half-bridge inverter prototype. In Phase II, the devices will be applied in DOE accelerator applications. Commercial Applications and other Benefits as described by the awardee: Beyond the DOE accelerator market, the commercial potential of these improved devices should impact any high-power switching application.