X-ray sensors based on wide bandgap materials

ALTAIR Center proposes to develop new type of fast X-ray sensors based on wide bandgap materials, such as sapphire (single crystal Al2O3) and single crystal ZrO2, for several potential military and civilian applications. We will use a specially designedprocess of formation of contacts on large variety of wide bandgap semiconductors and dielectrics via their laser ablation in order to control the spectral selectivity of the sensors. In Phase I of the Project we will demonstrate the new technology forfabrication of the sensors for both soft (photon energy less then 1 keV, wavelength ranging from 1to100 nm) and deep X-ray region using sapphire (Al2O3) and ZrO2. In Phase II of the project the technology will be completely developed, optimized and appliedto fabrication of a prototype sensor system with final product delivered to DoD.In additional to immediate military application the novel X-ray sensors will find many scientific, commercial and medical applications including time-resolved characterizationof dense plasma, either laser- or discharge generated, medical imaging, etc.