NOVEL TUNGSTEN METALLO-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) SOURCE REAGENTS FOR VLSI APPLICATIONS

THE CONTINUED DRIVE TOWARD VLSI AND THREE-DIMENSIONAL INTEGRATION PLACES EVER-INCREASING DEMANDS ON METALIZATION STRUCTURES. NEW MATERIALS ARE NEEDED TO ADVANCE THESE VITALTECHNOLOGIES. THE MANY ADVANTAGES OF REFRACTORY METAL THIN FILMS PREPARED BY CHEMICAL VAPOR DEPOSITION (CVD) INCLUDING CONFORMAL STEP COVERAGE, HIGH ELECTRO-MIGRATION RESISTANCE AND LOW RESISTIVITY MAKE THEM ATTRACTIVE FOR GATE, INTERCONNECT, CONTACT, DIFFUSION BARRIER AND VIA PLUG METALIZATIONS. HOWEVER, THE APPLICATION OF CVD TUNGSTEN ANDMOLYBDENUM TO VLSI PROCESSING HAS BEEN IMPEDED BY THE SECONDARY REACTIONS CAUSED BY THE FLUORINE LIGANDS OF THE ELEMENTAL SOURCE REAGENTS USED IN THE CVD PROCESS. THESE REACTIONS ULTIMATELY LEAD TO THE FAILURE OF THE DEVICE. THEOBJECTIVES OF THE PROPOSED RESEARCH ARE THE ELABORATION OF ASET OF MOLECULAR DESIGN CRITERIA FOR REFRACTORY METAL SOURCEREAGENTS AND THE IDENTIFICATION OF A NOVEL ORGANOTUNGSTEN CVD SOURCE REAGENT WHICH REVOLUTIONIZES VLSI METALIZATION. THESE GOALS WILL BE MET BY APPLYING A MULTIDISCIPLINARY APPROACH IN WHICH RESULTS FROM FILM GROWTH AND FUNDAMENTAL DECOMPOSITION STUDIES ARE USED TO REFINE THE MOLECULAR STRUCTURE OF THE SOURCE REAGENTS.