Innovative Development of a Large Area SiC Growth System & Growth Process

Silicon carbide (SiC) is an attractive material for use in high power and high temperature devices. Currently, there are significant challenges for the growth of large area epitaxial films of SiC. We are proposing to develop novel growth systems and growth processes for the large area growth of SiC. In our approach, we will increase the uniformity of Si/C ratios and temperature at the growth interface. By accomplishing these goals, we anticipate dramatic improvement in the doping thickness uniformity of SiC epitaxial layers. Further, by judious selection of reactor materials we will reduce the background impurities in the high temperature growth environment. The new materials proposed for the susceptor and heated area including refractory metals and ZrP. As part of the proposal, growth process will be developed for SiC films grown on either SiC or Si substrates. These new processes will take advantage of the innovative features of our growth reactor. Various electrical, structural and chemical characterization techniques will be employed in order to demonstrate the advantages of the new design. It is anticipated that this innovative development of growth technology and process will occur in parallel to, and will take advantage of, the near term availability of larger area, 3", SiC substrates. BMDO missile systems, as well as other military and space systems, are demanding new advanced electronic devices to function efficiently at high temperature, high power, high frequency and in high radiation environments. High temperature, high power and high frequency electronics are required for the 'more electric' vehicle, for example in jet engine ignition and control systems, and will have broad applicability in many, dual use, commercial markets.