STTR Phase II: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

This Small Business Technology Transfer (STTR) Phase II project will develop a vertical cavity surface emitting laser (VCSEL) that operates at 1.3 micron wavelength based on incorporating a quantum dot active region of GaAs-based InAs and GaAsSb. It is based on recent research developments within the university laboratory in developing novel 1.3 micron laser and VCSEL sources, and the commercial epitaxial growth capability of the company. In the project the tasks involved include growing GaAsSb quantum dots and quantum well structures, fabricating VCSELs using the InGaAs and GaAsSb based quantum dot and GaAsSb quantum well active regions, and development, demonstration and evaluation of manufacturable, high Q cavity suitable for commercial 1.3 micron VCSELs. Commercially the project will lead to important new products for an emerging fiber optic market. The low cost 1.3 micron wavelength VCSEL is viewed by industry analysts as a key enabling device for high volume production of fiber optic transceivers for the metro and metro access markets.