High-Efficiency AlInGaP Visible Vertical Cavity Lasers

We propose extending the operating range of VCSELs to He-Ne wavelengths and beyond, by taking advantage of recent breakthroughs in selective oxidation and wafer fusion, combined with better heat sinking. Selective oxidation is not only a low-loss way to confine current and optical energy, but can be used to convert low reflectivity semiconductor mirrors to high reflectivity AlInP/AlxOy mirrors. These latter mirrors have excellent reflectivity down to 560 nm. Wafer fusion allows us to replace an absorbing GaAs substrate with a transparent GaP substrate. This in turn allows flip-chip bonding, which improves thermal management and device efficiency.