HIGH ACCURACY CHARACTERIZATION OF MONOLITHIC MILLIMETER-WAVEDEVICES

MAKING ACCURATE ON WAFER MEASUREMENTS OF MILLIMETER WAVE SEMICONDUCTOR DEVICES AND CIRCUIT ELEMENTS IS A FUNDAMENTAL REQUIREMENT FOR THE ADVANCEMENT OF MILLIMETER WAVE TECHNOLOGY. MILLIMETER WAVE WAFER PROVE DEVELOPMENT IS REQUIRED. PRESENTLY ON-WAFER PROBING IS AVAILABLE ONLY TO 26.5 GHZ. HOWEVER, SIGNIFICANT INNOVATIONS ARE REQUIRED TO EXTEND THIS CAPABILITY TO HIGHER FREQUENCIES. THIS WORK INVESTIGATES THE FEASIBILITY OF OVERCOMING PROBLEMS IN THE MILLIMETER WAVE BANDS. PHASE ONE RESULTS IN PROTOTYPES OF DC TO 50 GHZ WAFER PROBES AND MEASUREMENT CALIBRATION STANDARDS FOR THE MEASUREMENT OF ACTIVE MILLIMETER WAVE DEVICES ON-WAFER. THESE RESULTS WILL PROVIDE A BASIS TO ACHIEVE UP TO 110 GHZ PERFORMANCE IN LATER WORK.