HTS SNS Devices On Large-area Substrates By Single-source Mocvd

IN PHASE I OF THE PROPOSED EFFORT, A NOVEL, SINGLE-SOURCE METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) TECHNIQUE WILL BE APPLIED TO THE FABRICATION OF DEVICES EMPLOYING SUPERCONDUCTING- NORMAL-SUPERCONDUCTOR (SNS) JOSEPHSON JUNCTIONS. CONDUCTUS RECENTLY DEVELOPED A YBCO-BASED SNS JUNCTION USING CaRuO(3) AS THE EPITAXIAL BARRIER LAYER IN THE EDGE JUNCTION GEOMETRY, THE PERFORMANCE OF WHICH IS PROMISING FOR APPLICATION TO SENSORS AS WELL AS CIRCUIT ELEMENTS. SINCE THE CRITICAL CURRENT CAN BE CONTROLLED BY THE THICKNESS OF THE NORMAL BARRIER LAYER, THE FABRICATION OF SNS DEVICES OFFERS PROMISE FOR LARGE-SCALE PRODUCTION BECAUSE THIS THICKNESS CAN BE EASILY CONTROLLED. HOWEVER, THE EXISTING YBCO DEPOSITION TECHNOLOGY IS LIMITED IN ITS CAPABILITY TO UNIFORMLY COAT LARGE-AREA SUBSTRATES. A SOLID-STATE, SINGLE-SOURCE MOCVD TECHNIQUE, WHICH HAS BEEN USED TO REPRODUCIBLY GROW HIGH-QUALITY EPITAXIAL YBCO AND OTHER OXIDE THIN FILMS AND MULTILAYERS ON SUBSTRATESAS LARGE AS FOUR INCHES IN DIAMETER, WILL BE USED TO FABRICATE YBCO/CaRuO(3)/YBCO SNS EDGE JUNCTIONS ON TWO INCH DIAMETER SUBSTRATES. THE UNIFORMITY OF THE ELECTRICAL PROPERTIES OF THE SNS JUNCTIONS WILL BE TESTED.