Infra Red Detector Array on a Silicon Compatible Substrate

Development of HgCdTe FPAs on Mg2Si/Si will reduce thermal expansion mismatch of the sensor substrate and the signal collector substrate, which will result in lower device noise levels and also lower the processing costs. Significantly lowering the cost of FPA\'s will allow broader application of these devices. films of Mg2Si on Si (100) substrates for Infra Red Focal Plane Arrays (FPA) using a Remote Source Molecular Beam Fpitaxy (MBF) technique. In remote source MBE, vapors are transported from remote elemental source reserviors and feed through regulating valves into a hot effusion manifold which is located beneath the sample. Films will be deposited in a single source MBE deposition chamber which is connected to an UHV surface analysis chamber (equiped with LEFD, AFS, UPS, and SIMS) through a UHV sample transfer system. The process parameters for the growth of Mg2Si will be investigated. The stability of Mg2Si/Si films under thermal cycling between room and liquid nitrogen temperatures will be studied using LFED, SFM, and TFM analysis. In phase l, samples will be processed as far as possible in an LPE HgCdTe FPA process line. In phase Il, HgCdTe FPA\'s will be constructed on the Mg2Si buffer layers and functional devices would be fabricated and characterized.