SBIR/STTR Research Award
GROWTH OF EPITAXIAL OXIDE FILMS ON SILICON
Award amount
$50,000Program and phase
SBIR · Phase IAward year
1993Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- K27PQS4LF5S9
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
THE RESARCH DEMONSTRATES EPITAXIAL GROWTH, BY LASER ABLATION IN A UHV VACUUM SYSTEM OF HIGH QUALITY, INSULATING OXIDE FILMS ONTO HEATED SINGLE CRYSTAL SILICON SUBSTRATES, FOLLOWED BY CVD EPITAXIAL GROWTH OF SILICON ONTO THE INSULATING OXIXDE. THE RESEA CHERS ARE FOCUSING ON MGO, CEO2, AND PRO2 AS THE CANDIDATE EPITAXIAL INSULATING LAYERS. BOTH THE LASER ABLATED EPITAXIAL OXIDE FILMS AND THE CVD EPITAXIAL SILICON FILMS ARE CHARACTERIZED FOR CRYSTAL QUALITY AND ELECTRICAL PROPERTIES. CRYSTAL QUALITY IS MONITORED IN SITU DURING GROWTH BY REFLECTION HIGH ENERGY ELECTRON DIFFRACTION. THE GOAL FOR THIS WORK IS TO ENABLE A SILICON-ON-INSULATOR STRUCTURE IN WHICH THE INSULTOR IS GROWN EPITAXIALLY.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Next-Generation Visible Light Photon Counters
- Demonstration of Modular Biopower System Using Poultry Waste
- Strained Silicon Quantum Wells for Cryogenic Electronics
- Carbon-Doped Polycrystalline Silicon-Germanium Gate Contacts for Low Voltage, Radiation Hard CMOS
- Silicon-Based APD Arrays for 1064 nm LIDAR
Research funding history
11 SBIR/STTR records share this UEI (1992–2002). Reported award amounts total $1,888,486. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services, National Science Foundation