PROCESS AND DEVICE MODELS FOR HEMT MM-WAVE TECHNOLOGY

A COMBINED PROCESS AND DEVICE MODELING COMPUTER PROGRAM FOR HIGH-ELECTRON MOBILITY TRANSITOR (HEMT) MM-WAVE TECHNOLOGYWILL BE DEVELOPED. THE PROGRAM WILL ALLOW ENGINEERS TO TRY OUT DIFFERENT TYPES OF TRANSISTOR DOPING, LAYER THICKNESSES, AND FET LAYOUTS BYCOMPUTING I-V CHARACTERISTICS, EQUIVALENT-CIRCUIT PARAMETERS, AND S-PARAMETERS. THE KEY FEATURES OF THIS PROPOSAL ARE THE DEVELOPMENT OF APOISSON/SCHROEDINGER EQUATION SOLVER FOR OBTAINING THE CARRIER DENSITIES FOR ARBITRARY GATE VOLTAGES, THE DEVELOPMENT OF AN I-V MODULE THATUSES THE CARRIER DENSITIES TO COMPUTE THE SOURCE-DRAIN CURRENT AND SMALL-SIGNAL PARAMETERS, THE INCORPORATION OF THOSE MODULES INTO A EASY-TO-USE PROGRAM FOR THE ANAYLSIS OF A WIDE VARIETY OF HEMT STRUCTURES, AND THE COMPARISON OF THE RESULTS WITH DATA OBTAINED FROM GOVERNMENT AND INDUSTRY MM-WAVE MMIC PROGRAMS. ANTICIPATED BENEFITS/POTENTIAL COMMERCIAL APPLICATIONS - THIS PROGRAM IS DESIGNED TO HELP ADVANCE THE STATE OF THE ART OF MM-WAVE TECHNOLOGY BY PROVIDING AN ANALYSIS TOOL ALLOWING PROCESS, DEVICE, AND TEST ENGINEERS TO OPTIMIZE DEVICES FOR PERFORMANCE AND MANUFACTURABILITY THROUGH A QUANTITATIVE ASESESSMENT OF FACTORS AFFECTING PERFORMANCE OR UNIFORMITY.