SBIR Phase I: Dual Magnetic Tunnel Junction (DMTJ) Materials and Structures for STT-RAM

This SBIR Phase I research project is to investigate material innovations that are necessary to take spin transfer torque random access memory to the product development stage. Grandis will produce single and dual magnetic tunnel junction structures to determine processes and structures for producing maximum tunneling magnetoresistance with reduced critical current. Spin Transfer Torque Random Access Memory has the potential to provide a fast, nonvolatile, low power high density memory solution which could transform the commercial memory product landscape. Successful commercialization of this technology would provide new levels of performance in computing and data storage devices.