SBIR/STTR Research Award
HIGH EFFICIENCY MONOLITHIC GUNN OSCILLATORS
Award amount
$51,778Program and phase
SBIR · Phase IAward year
1987Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Gain Electronics Corp
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
MOST GUNN DIODE OSCILLATOR APPLICATIONS CURRENTLY EMPLOY A DISCRETE GUNN DIODE EMBEDDED INTO EITHER A HYBRID OR A WAVEGUIDE MATCHING CIRCUIT. NEXT GENERATION MILITARY SYSTEMS WOULD BENEFIT FROM A MONOLITHIC DESIGN WHICH INCORPORATES THE GUNN DIODE AND ITS ASSOCIATED MATCHING CIRCUITRY ONTO ONE GAAS SUBSTRATE. THIS APPROACH OFFERS SEVERAL ADVANTAGES WHICH INCLUDE LOWER UNIT COST, BETTER REPRODUCIBILITY, SMALLER SIZE, LESS WEIGHT, AND BETTER PERFORMANCE. THIS PROGRAM WILL OPTIMIZE THE DESIGN OF A MONOLITHIC GUNN OSCILLATOR FOR OPERATION AT 35 GHZ PHASE I EFFORTS INCLUDE THE OPTIMIZATION OF THE DOPING PROFILE FOR MAXIMUM POWER AND EFFICIENCY AND THE DEVELOPMENT OF THE PROCESS TECHNOLOGY FOR PLANAR DEVICES. PLANAR DISCRETE GUNN DIODES WILL BE FABRICATED AND EVALUATED. IN PHASE II, MATCHING CIRCUITS WILL BE DESIGNED AND FULLY MONOLITHICS OSCILLATORS FABRICATED AND EVALUATED DURING PHASE II.
Technology keywords
Not reported