Precison Automatic Landing System

Not Available SPECMAT, Inc. proposes todemonstrate the use of its revolutionary Room Temperature Wet Chemical Growth (RTWCG) process to grow low dielectric constant (2<k<3) stable SiO-based dielectric films capable of filling high aspect ratio gaps of 0.18 um and smaller. So far the patent pending RTWCG process,invented by the two key investigators of this proposal, was used by SPECMAT to grow 10 nm to 800 nm thick SiO-based oxides on large area Si substrates. The oxides have a static dielectric constant from 2.95 to over 4.8, and a growth rate of 2 nm/minute to 64 nm/minute, depending on the composition of the chemical system. Based on preliminary results the properties of the as-grown SiO-based thin films incsiO-based oxides include: comparable to thermal SiO2 resistivity, dielectric strength, and leakage current. The potential of these SiO-based oxides include: lower than thermal or CVD SiO2 charge trap density at the Si/oxide interface, and better than CVD SiO2 UV stability, and radiation hardness. Phase I R&D effort, will demonstrate the RTWCG process is compatible with processing sequences of Si-based ICs, and the properties of SiO-based oxides grown using the new process qualify them for use as stable low k dielectrics in future ICs. Phase II will develop, and Phase III will commercialize the RTWCG of SiO-based technology for next generation ULSI devices.