Hydride Vapor Phase Epitaxy For Ga(In)N/AlGaN Quantum-Well Structures

We propose to develop hydride vapor phase epitaxy (HVPE) to fabricate multi-layer epitaxial structures for advanced GaN-based devices with quantum wells. Currently, only metal organic chemical vapor deposition is employed to fabricate production GaN-baseddevices including ligh emitters and high-power microwave devices. Another epitaxial method known to deposit high quality GaN layers is the HVPE. Recently, we demonstrated GaN-based device structures grown by HVPE. These results open the opportunity todevelop a new epitaxial technology for quantum size epitaxial structures based on HVPE technology. Phase II objective is to develop cost-effective production technology for GaN-based epitaxial structures with multiple quantum wells. High performanceGaN-devices with quantum well structures fabricated by HVPE technology will find a host of applications in high-power, high-frequency, high-temperature electronics and optoelectronics for military and industrial needs.