SiC Epi-Wafers for Large Area High Power Diodes

TDI proposes to develop novel epitaxial technique for high-power large area SiC diodes. Recently TDI has reported silicon carbide pn structures grown by sublimation and liquid phase epitaxy and demonstrated building blocks for SiC power devices includinglow resistivity Ohmic contacts to p-SiC, 4H-SiC pn diode chips with breakdown field > 2MV/cm and low leakage current. 6H-SiC diode chips with stable electric breakdown at 50 kW/cm2 dissipating power were demonstrated. Significant reduction in defectdensity in SiC epitaxial layers has been achieved. These results open the opportunity to develop epitaxial technology for large are SiC devices. The goal of the Phase I is to prove the concept and demonstrate large area high power SiC diodes. In thePhase II, we will focus on the development of manufacturing technology for low defect SiC epi-wafers for high power devices.High performance SiC power devices for electric power conversion and traction motor control will find a host of applications inmilitary vehicles, air platforms, space platforms, and in commercial components like industrial motor drives, power converters and power supplies.