FABRICATION OF SI-GE HETEROSTRUCTURE BIPOLAR TRANSISTORS

THIS PROPOSAL DESCRIBES A PROGRAM FOR THE DESIGN AND FABRICATION OF SI-GE HETEROSTRUCTURE BIPOLAR TRANSISTORS (HBT) FOR APPLICATIONS IN COMMUNICATIONS. EMPHASIS WILL BE PLACED ON LOW NOISE, HIGH POWER AND HIGH FREQUENCY PERFORMANCE. THE INNOVATION HERE IS THE USE OF AN ADVANCED DEVICE PHYSICS SIMULATION COMPUTER CODE FOR THE DESIGN OF THE DEVICES. DEVICES WILL BE FABRICATED ACCORDINGTO THE DESIGN EMERGING FROM THE ANALYSIS. THIS APPROACH IS COST-EFFECTIVE AND ELIMINATES THE TRIAL-ERROR EFFORT NORMALLY EMPLOYED IN FABRICATION PROCEDURES. THE NUMERICAL SIMULATION PROCEDURE TO BE USED IN THE PROPOSED WORK HAS BEEN WELL TESTED IN THE DESIGN OF ALGAAS/GAAS HBTS, INGAAS/INP HBTS, HEMTS AND PBTS. THE DEVICE FABRICATION WILL BE UNDERTAKEN BY UNIVERSITY OF ILLINOIS, PROFESSOR H. MARKOC, WHO WILL BE A SUBCONTRACTOR TO THE PROPOSED WORK.