ADVANCED DIODE LASER STRUCTURES FOR 2-5 UM AT 300K

WE PROPOSE TO STUDY THE BENEFITS AND DRAWBACKS OF VARIOUS ADVANCED LASER DIODE STRUCTURES FOR THE 2-5 UM MID-INFRARED SPECTRUM AND TO ACTUALLY CONSTRUCT A WORKING GRATING SURFACE EMITTING (GSE) LASER STRUCTURE FOR 1.65 UM DURING OUR PHASE I PERIOD. THIS AMBITIOUS PROGRAM TAKES ADVANTAGE OF TECHNOLOGY ALREADY DEVELOPED AT THE SRI DAVID SARNOFF RESEARCH CENTER FOR SHORTER WAVELENGTH DEVICES. DR. RAMON MARTINELLI OF SRI WILL CONSULT. OTHER STRUCTURES UNDER STUDY INCLUDE A) ON-CHIP UNSTABLE RESONATORS, B) NON-REGENERATIVE DIODES IN EXTERNAL CAVITIES, C) LASER-AMPLIFIER PHOTONIC INTEGRATED CIRCUITS, D) ANTIGUIDED, LEAKY ARRAYS, AND E) MULTI-QUANTUM WELL STRUCTURES. THE WAVELENGTHS/POWER/TEMPERATURE DEPENDENCE, OPTICAL FIELD PATTERNS AND EASE OF FABRICATION WILL BE CONSIDERED IN OUR STUDY. WE WILL RECOMMEND THE FABRICATION OF ONE OR MORE OF THESE STRUCTURES IN PHASE II AND OPTIMIZE THE PERFORMANCE OF THE MOST PROMISING STRUCTURE OUT TO 5 UM.