RADIATION REPONSE OF EPI-LESS BOND ETCH SILICON-ON-INSULATOR FABRICATED WITH MEV ION IMPLANTATION

EPI-LESS BOND ETCH SILICON-ON-INSULATOR (EL-BESOI) USING MEV ION IMPLANTATION IS A NEW APPROACH TO FABRICATING HIGH QUALITY SOI PARTICULARLY FOR VERY THIN SOI (100-300 NM) AS REQUIRED FOR USE IN HIGH SPEED, FULLY DEPLETED, CMOS DEVICE STRUCTURES. AND THE RADIATION RESPONSE OF SUCH SOI MATERIAL IS A CONTINUING CONCERN FOR RADIATION ENVIRONMENTS SUCH AS SPACE, REACTORS, OR NUCLEAR BURSTS. BONDED SOI MATERIAL IS UNIQUE IN THAT THE OXIDE CAN BE CUSTOM DESIGNED OR MODIFIED DURING FABRICATION FOR A DEGREE OF CONTROL OF RADIATION HARDNESS PROPERTIES. THIS PROGRAM WILL STUDY SUCH OXIDE FABRICATION TECHNIQUES AND EVALUATE THEM FOR RADIATION RESPONSE UNDER INTENSE X-RAY, ELECTRON, AND PROTON BOMBARDMENT. ADDITIONALLY, OPTIMIZATION OF THE MEV EL-BESOI MANUFACTURING PROCESS WILL ALSO BE PURSUED FOR 3" AND 4" WAFERS.