Growth of New Wide Band Gap Nitride Semiconductors for Yell

The goal of the SBIR Phase I proposal is an attempt to grow the world's first single crystalline new wide band gap nitride semiconductors by MOCVD for developing optoelectronic and optical devices in yellow to green visible band as well as lattice matched heterostructure wide band gap electronic devices. The expected direct transition, wide band gap electronic structure and the significant nonlinear optical properties of the material hold promise of the aforementioned applications. The possibility of constructing lattice matched heterostructures for carrier and optical confinement in this material system, which seems impossible in AlGaInN system, promises developing high performance photonic and electronic devices. Fundamental physical properties of the semiconductor materials, including lattice structure and constants, optical transition, electronic structure and carrier transport characteristics, will be investigated theoretically and experimentally utilizing the first-principles local density approximation calculation, X-ray diffraction. reflection high energy electron diffraction, photoluminescence, cathodoluminescence, absorption measurement and Hall effect measurement. Yellow-green light emitters, second harmonic generators or lattice matched heterojunction transistors will be developed in the Phase II based on the Dromise of the new materials.