STRAIN-LAYER SUPERLATTICE BARRIERS FOR SILICON QUANTUM DEVICES

This proposal deals with a number of Si quantum devices employing the patented Strain-layer Superlattice Barrier (SLS-B) serving as barrier quantum confinement in silicon. These barriers normally consist of, for example CaF(2)/Si/Ca(2), A1(2)O(3)/Si/A1(2)O(3) or SiO(2)/Si/SiO(2). Our emphasis is on a SiO(2)/Si/SiO(2) SLS-B as a superlattice barrier for Si quantum wells. The proposed work involves the development of a deposition system for the demonstration of device potential consisting of the SLS-B, as well as the fabrication of actual quantum transistors such as the field effect transistor, the bipolar transistor, as the follow up goal of this work.