SBIR Phase I: Scalable Bulk GaN Crystal Growth

This Small Business Innovation Research Phase I project will demonstrate the feasibility of economical and scalable GaN bulk crystal growth techniques to produce non-polar and semi-polar GaN substrates with a uniformly low dislocation density. The non-polar and semi-polar GaN substrates will be derived from a novel multi-step crystal growth process that yields true bulk GaN single crystals. These substrates will find application in advanced GaN-based devices such as laser diodes and ultra-high brightness light emitting diodes (LEDs).The resulting substrate price reduction will accelerate adoption of GaN substrates by LED manufacturers, and expand LED use in demanding and price sensitive solid-state lighting applications. GaN-based LEDs present exciting long-term prospects for solid-state lighting, via the replacement of inefficient and/or toxic conventional light sources such as light bulbs and fluorescent lamps.