SBIR/STTR Research Award
A High Performance 1550 nm Tunable VCSEL based on GaA1AsSb/AlAsSb on InAs Substrate
Award amount
$59,942Program and phase
SBIR · Phase IAward year
1997Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- FERMIONICS CORP.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
A novel approach for long-wavelength (1.3 um and 1.55 um) VCSELs based on GaxAl1-xAsySb1-y/AlAs0.16Sb0.84 material system lattice matched to InAs substrate is proposed. Preliminary modeling results have shown that the reflectivity of DBR mirror stack made of this materials system is higher than that of any other III/V semiconductor material systems. Since edge emitting lasers using AlAsO16SbO84 as cladding layers have been successfully demonstrated, the proposed structure is very promising for room temperature cw operational VCSELs in the wavelength range of 1.3 - 1.55 um. A tunable version with micromachined mirror will also be designed. Development of high performance, manufacturable VCSELs in the 1.3 um and 1.55 um will provide a laser source unique to VCSELs for long distance fiber optical communication systems and WDM systems for which only the edge emitting type of lasers is available.l
Technology keywords
Not reported