Animation, Visualization and Real-Time Control of Automated Ammunition Handling Manipulators

Not Available Up to date, InSb and HgCdTe are the industry standard materials for Infrared focal plan arrays(FPAs) operating in the wavelength regions of 3-5 mm and 8-14 mm (the so-called atmospheric windows).Due to the lack of suitable substrate, the detector arrays must be In bump -bonded to the read-out integrated circuit(ROIC) on Si substrates, which limits array sizes, yield, and stability. ELI proposes to develop high quality InSb on Si epitaxial wafers for large area InSb and HgCdTe based IRFPAs. ELI will apply a novel approach to incorporate a new composition graded buffer layer (CGBL)on Si substrate to reduce/eliminate the threading dislocation in the thin InSb epilayers grown on top of the CGBL. In phase I, design and growth of novel buffers will be carried out, and high quality InSb thin epiwafer will be demonstrated. The optimization of the CGBL and production of high quality Si based InSb epiwafers will be realized in phase II