GaN Power MISFETs

WideGap Technology (WiTech) proposes to develop AlN/GaN MISFETs based on selectively grown GaN channels. The high breakdown field in GaN coupled with the extended region of high velocity at high electric fields makes GaN an ideal material for high microwave power applications. Using AlN as the gate insulator suppresses the gate leakage current and eliminates the problem of low schottky barrier height of metals on GaN. Additionally, the selective growth of the FET source and drain access regions reduces the access resistance without reducing the breakdown voltage. This approach also allows us to maintain the gate insulator technology with its associated advantages without compromising series resistances.