Low Power analog Drive Amoled Miniature Display

Not Available Next generation of phased-array radar, satellite systems, and cost driven, commercial markets of automotive collision warning radars, personnel communication systems are all moving to higher frequencies, resulting in a need for better device with lower cost. Designers want to digitize the signal as close to the front end as possible. This is driving the development of 100 GHz or greater IC technology for A/D converters, synthesizers, MUX/DEMUXs, DDSs, and PRNs. At microwave frequencies, InP HEMT devices have demonstrated the best combination of gain, noise figure, and linearity. But the InP substrate is very expensive. The price of a raw 3-inch InP substrate(~$800) is comparable to the cost of a 4-inch GaAs PHEMT wafer. When considering the mature GaAs MESFET and PHEMT technology with 4 inch fab lines, retaining GaAs substrate in manufacturing operation, as opposed to switching to InP substrates, is highly desirable. ELI proposes a next generation TlGaAs based PHEMT on GaAs substrates. TlGaAs on GaAs PHEMT will offer many advantages over present technologies. These include Improved performance with reduced cost, better reliability, and lower leakage currents. In phase I, MBE growth of TlGaAs will be carried out, and prototype PHEMT device will be realized in phase II.