Mitigation of MHD, EMP, and Geomagnetically Induced Currents on Long Lines for Missle Defence Systems and Infrastructure Protection

We will develop and deliver a 1280x1024-pixel indium gallium arsenide (InGaAs) photodiode array sensitive to the 0.9 ¿m to 1.7 ¿m short wave infrared wavelength band. This will be the largest SWIR infrared array ever fabricated in this material system.Upon completion of Phase II, devices will be available for integration with matching silicon readout circuits for high sensitivity, high dynamic ranging imaging at elevated temperatures (>295K), ideal for night vision imaging, covert surveillance, andeye-safe range-gated imaging. Innovations include miniaturization of the individual InGaAs p-i-n photodiodes, minimization of the spacing between the photodiodes in the array, development of corresponding indium bump technology, and use of large (75 mm -100 mm diameter) epitaxial wafers. During Phase I, we reduced the pixel geometry from 24 ¿m to 11 ¿m, a 5x reduction in total device area. During Phase II, we will produce a full 1280x1024 array on 75 mm and 100 mm diameter epitaxial wafers. Thisprogram will benefit from several Sensors Unlimited R&D programs, including our NIST ATP program developing 100 mm diameter InP/InGaAs wafer processing technology.