SBIR/STTR Research Award
InGaN High Temperature Photovoltaic Cells
Award amount
$99,956Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- Integrated Micro Sensors, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- HKDSBLXQQLL1
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ýýC to 250ýýC. At the end of the Phase I, the technology will be at TRL 3.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drastic Improvements in Bonding of Highly Dissimilar Materials
- High-Speed Radiation Tolerant Avalanche Photodiodes Based on InGaN for Space Altimeter Systems
- Miniature Intelligent Wireless Fire Detector System
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
Research funding history
27 SBIR/STTR records share this UEI (2001–2013). Reported award amounts total $6,557,770. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Health and Human Services