Integral Silicon Carbide Layers on Diamond

Vapor deposited diamond possesses excellent characteristics as a protective material for the infrared windows and radomes of high speed missiles. At high temperature, diamond is itself subject to rapid erosion when exposed to oxygen. In order to protect diamond against oxygen a thin layer of the diamond surface can be transformed into silicon carbide. Silicon carbide is hard, thermally stable and highly resistant against oxidation. As an integral layer formed upon the diamond below, the silicon carbide will not be subject to adherence failure problems.