An Innovative Low Cost TCXO for GPS Receivers

Not Available ALTAIR Center proposes to develop an innovative compact high-efficiency electron-beam-pumped semiconductor laser generating up to 10 W of average power in a broad spectral region from 330 nm to 23 um at room temperature. The compact and efficient laser design becomes possible due to recently demonstrated efficient generation of laser radiation in an electron-beam-pumped quantum well semiconductor structure at room temperature. The laser takes advantage of combining a well developed and cost efficient CRT technique with recent advances in the fabrication of the quantum wells and other quantum confined semiconductor materials. The laser parameters can be easily controlled by modulating the pumping e-beam. Innovative technology for fabricating the semiconductor materials with microscopic clusters will be developed and incorporated in the system design. This approach opens a door to the next generation of light weight, low cost laser devices capable to efficiently generate radiation in a broad spectral region using different semiconductor materials. In Phase I of the project we will demonstrate efficient generation at room temperature for a number of different semiconductor materials. Based on the obtained results, the design of the e-beam pumped semiconductor laser will be finalized. The prototype 10W laser system operating at room temperature will be assembled and tested in Phase II of the project with final device delivered to the BMDO.