Seismic Monitoring System Calibration Using Ground Truth Database

Not Available SY Technology, Inc. can develop the ability to design and fabricate surface microstructures that function as anti-reflective coatings in infrared materials including the III-IV and group IV semiconductors and ceramics. Through experiments, SY has developed lithography processes for InSb, InAs, GaP, Ge, Si, TiO2, SrTiO2, and YSZ. We propose to use our optical design tools, laboratories, photoresists, spinners, mask aligners, reactive ion etchers and ion mills to develop the processes required to fabricate sub-micron anti-reflective features in HgCdTe, InSb, PtSi, and Si:As IBC. Sub-micron features will be etched into InSb and its reflectance experimentally verified as part of the Phase I effort. Processes for fabricating anti-reflective structures in HgCdTe will address human safety issues. Interest in HgCdTe, PtSi, InSb, and Si:As IBC process development stems from the materials' broad-band spectral performance as detector materials. Including sub-micron anti-reflective structures on these materials increases the coupling efficiency (air to material), thus increasing device responsivity. Birefringence properties of sub-micron anti-reflective structures can be avoided with two-dimensional designs. A 1-D Rigorous Coupled Wave Analysis Code, currently operated at SY Technology, Inc., will be modified to 2-D. The Phase I results will be used to develop a rapid prototyping capability to respond to identified market demands.