SBIR/STTR Research Award

GaAs-Ge Alloys for Optical Processing at 1.3-1.5 microns

Award identifier 309650729bf69b0d5f0d2ecfc09379e5288ec761e38807c12a2d1af78195a1c6Awarding agency Department of Defense · Missile Defense Agency

Award amount

$50,458

Program and phase

SBIR · Phase I

Award year

1992

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Spire Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Fast electronics talking to optical circuits built right on the same chip are everybody's goal; problem is, it's not so easy to get there with infrared optics. Spire proposes a clever way around this, doubly clever because it's based on well known materials and methods combined in new ways. Starting with GaAs, an excellent choice for high-speed electronics but an infrared dead-head, by mixing in a little Ge, Spire will create a new alloy which is optically alive and fits perfectly on GaAs substrates. Infrared emitters and detectors can be built in the alloy, fast electronics in the GaAs. If this works, Spire argues, it's lower cost and higher reliability will knock existing infrared technologies right out of the market for fiber optic communications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Defense

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