Compact All-Silicon Carbide Inverter Development

We propose to develop an Inverter Test Facility to evaluate the performance of Silicon vs. Silicon Carbide power devices. In Phase-I, we will use this Test Facility to measure the performance of a baseline Silicon-based 5 HP inverter; in Phase-II, we willuse this data as bench mark to evaluate the superiority of Silicon Carbide devices. The intent is to demonstrate key benefits of high temperature capability, small-size or higher efficiency of SiC devices over existing Si devices. In Phase-I, we will(i) develop an Inverter Test Facility that can accept either Si or SiC devices or modules and (ii) develop a high speed CAN-based DSP controller card that drives the test bed (iii) develop DSP software to control a 5 HP 3-phase motor, (iv) develop a dynotest rig to measure its performance and (v) test the full-power performance of the Si inverter, including the effect of temperature on efficiency. We will also review the advances in SiC power device development and identify leading suppliers ordevelopers. In addition, in Phase-I Option, we will continue the preliminary design of the All-SiC inverter and will finalize the procurement or engineering sample development strategies for the All-SiC devices and modules.With SiC devices inverters canoperate at higher temperatures than those possible by the current technology Si inverters. They also reduce size or increase efficiency. Applications include military vehicles, mining industry motors, More Electric Aircraft , Navy and Pulse Power as wellas numerous commercial markets.