Applicaiton of Nitrogen Gas Cluster Beams for Reacitve Formation of GaN Thin Films at Low Temperatures

Nitride semiconductors have characteristics of interest for future electronic and optoelectronic devices. Improved thin film growth techniques for these materials will be required. Beams of energetic gas cluster ions comprised of hundreds or thousands of nitrogen molecules can be formed. Upon impact on solid surfaces, cluster ions are able to produce a number of effects which are not produced by monomer ions. It is believed that these effects can be employed for reactive growth of superior nitride materials at very low temperatures. The Phase I investigation will identify suitable cluster beam conditions for growth of GaN and will demonstrate preliminary GaN material.