Near Infrared Monolithic Focal Plane with Per pixel A/D

MOSAD, Multiplexed Oversample Analog to Digital conversion, is a patented improvement of the well known delta sigma A/D technology. It was specifically developed for large staring sensor applications to provide low power on focal plane A/D conversion. Newcommercial silicon germanium biCMOS technology is now available that produces germanium bipolar transistors on substrate with silicon CMOS devices. Depending on the density ratio of germanium to silicon, the IR sensitivity of the material will be extendedbeyond the 1.1 micron limit of silicon to the 1.8 micron limit of germanium. This technology can be used in the design of the MOSAD photo diode focal plane in a monlithic format to build a near infrared, NIR, camera. The advantage of MOSAD is that a highfill factor can be achieved for the germanium photo diode providing optimum quantum efficiency. Compared to the expensive uncooled InGaAs and HgCdTe alternatives, this new camera will dramatically reduce cost, opening up greater applications and providingmajor cost savings to the Government. The proposed study will provide a design approach for integrating commercial silicon germanium into a monolithic near infrared focal plane array.General requirements exist in the automotive industry for improved safetyrelating to impaired vision driving and to occupancy sensing. The use of low cost near infrared cameras represent a method to deliver eye safe illumination and improved vision for night driving and inclement weather driving. High contrast ratio displaysare also required, the demand for which can be satisfied with the MOSAD and stream vision imaging capability. The potential use of this type of camera system in this cost sensitive market alone can reach 60 million units annually.