SBIR/STTR Research Award

Nanoscale X-Y Stage for Precision Lithography

Award identifier 90ad1a5dfc38b577f154c39a65ff1d676d61f1c5e3d3995366610e8fc96f259dAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$99,000

Program and phase

SBIR · Phase I

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Garman Systems Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The state-of-the-art in the microelectronics industry is being pushed primarily by two motivations: the demand for more circuitry etched per unit area and the demand for higher throughput. Both of these needs can be met by an increase in the speed and/or the resolution of lithography positioning equipment. Proposed herein is an innovative X-Y stage design through which control of positions on the order of nanometers will be attempted while simultaneously increasing stroke length to 300 mm per axis, maximum speed to 1 m/s, and turnaround time to under 100 ms. The proposed design will utilize a macro-micro positioning approach analogous to an audio "woofer-tweeter" arrangement for each axis of the stage. This approach will allow for a decoupling of the positioners coarse and fine motion properties simplifying components and design of the entire system.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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