Silicon Carbide Power Transistors for High Power Transmitter

Astralux, in collaboration with the University of Colorado, proposes to develop high-power SiC microwave bipolar transistors for use in pulsed RF transmitters. More specifically, the performance goal is a 4H-SiC bipolar junction transistor (BJT) withpulsed power up to 650 W, single stage power gain up to 12 dB and bandwidth up to 3 GHz. The advantages of bipolar devices over Si-based devices include power gain, superior linearity and stability combined with a higher power dissipation capability.Compared to other SiC devices, the BJT provides better power added efficiency, higher power gain and superior linearity while operating on a single supply voltage, leading to more compact and cost efficient systems.SiC BJTs are identified as potentialhigh-power microwave devices and would greatly benefit the development of high-power transmitters and wireless communication.