SBIR/STTR Research Award

SBIR Phase I: Low Cost High Brightness Photonic Crystal Lasers with Integrated Non-Linear Crystals

Award identifier b9b8e7e09c99da59f003fc78c66f2e707803e431b129baebf22b5ec6d8f98fcfAwarding agency National Science Foundation

Award amount

$99,931

Program and phase

SBIR · Phase I

Award year

2006

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
PHOTODIGM INC
Proposal award date
Not reported
Contract end date
Not reported
UEI
T2Z5UMMFJ9Z8
Solicitation number
NSF 05-557
Topic code
EL

Research abstract

This Small Business Innovation Research (SBIR) Phase I project goal is to develop a highly coherent surface-emitting photonic crystal (SEPC) semiconductor laser operating in the 900 to 1070 nm wavelength range. High brightness lasers are required to efficiently pump non-linear crystals to obtain frequency doubled green (~532 nm) and blue (~470 nm) light. Initial prototypes will operate around wavelength of 976 nm to produce frequency doubled output at 488 nm as replacement for argon-ion lasers. To achieve high brightness the SEPC laser concept includes within the epitaxial structure a reflecting stack to minimize loss of light towards the epitaxial (p-side) metal contact caused by the bi-directional outcoupling of the SE photonic crystal. A broad set of applications for the frequency-doubled SEPC lasers include projection display, bioinstrumentation, semiconductor wafer inspection and chemical sensing. In addition, SEPC diode lasers will find application as direct replacement for fiber lasers. Furthermore, arrays of SEPC lasers will be used as high power laser sources with high beam quality in markets that include machining, material processing, and medical applications. Surface-emission makes possible complete wafer processing and testing, advantages that permitted improved reliability and significant reductions in cost due to the economy of scale for the silicon IC industry. Surface emission also eliminates the need for facet coating and prevents catastrophic optical damage (COD) as well as facet degradation. As a result, this SEPC device has potential for extremely low cost and electrical to optical efficiencies approaching 50%. The single frequency operation with a highly coherent, high brightness, single-lobe far-field provides an additional effective efficiency compared to conventional broad area diode lasers for pump applications. In addition, the output aperture size of the SEPC laser can be engineered to produce circular output beam without external optics further reducing the cost of the laser package.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

27 SBIR/STTR records share this UEI (2002–2018). Reported award amounts total $10,163,813. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Energy

Agency intelligence

National Science Foundation

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