High Current, High Voltage 4H-SiC Schottky Diodes for Power Switching

TDI proposes to develop novel silicon carbide high-power large area Schottky diodes for military and commercial applications based on epi-wafers with reduced defect density. During last few years, TDI developed technology methods, which significantlyreduce density of defects limiting device performances in silicon carbide. Recently TDI has demonstrated silicon carbide Schottky diodes up to 1.5 cm2 based on epitaxial structures grown on epi-wafers with reduced defect density. These results open theopportunity to fabricate robust high-power high-current SiC Schottky diodes.The goal of the Phase I is to prove the concept and demonstrate large area high power SiC Schottky diodes. In the Phase II, we will focus on the development of manufacturing technology for fabrication of SiC power Schottky diodes scaled to 1200 V and 120 Alevel based on low defect SiC epi-wafers. High performance SiC power Schottky diodes for switching applications will find a host of applications in military vehicles, air platforms, space platforms, and in commercial components like industrial motor drives, power converters and power supplies.