Fast Propagation Algorithms to Support Real-Time RF Visualization

Not Available SunPower proposes a high-efficiency, radiation-tolerant, thin silicon photovoltaic cell for space power generation. Compared to competing III-V (GaAs) photovoltaic cells, this cell is expected to provide nearly equivalent output power at about one-quarter of the cost. Based on preliminary simulations, we expect that the cell will achieve 18.8% beginning-of-life (BOL) AMO efficiency. Using SunPower¿s experimentally validated degradation models for lifetime surface recombination velocity, and emitter saturation current, we predict 15.7% end-of-life (EOL) efficiency after 1E15/cm2 of 1 MeV electron irradiation. At EOL, the cell is expected to provide over 80% of its BOL output power, making it as, or more, radiation tolerant than a typical GaAs/Ge cell. The specific power of this cell is projected to be more than 1.0 kW/kg at EOL, which is significantly, better than competing III-V cells. The cell design incorporates very thin float-zone (FZ) wafers with back-side point-contacts, similar to photovoltaic cells SunPower has commercialized for solar airplane and terrestrial concentrator applications. Phase I will fund process development, fabrication of prototype cells, and preliminary radiation tolerance testing