Heterostructures of Diamond and Wide Bandgap Semiconductors

Heterostructures of diamond and other wide bandgap semiconductors are expected to result in diamond films with high carrier concentrations and high mobility. Such structures should overcome the poor transport properties of currently made semiconducting diamond and allow device designers to take advantage of the high breakdown voltage, radiation resistance and high thermal conductivity of diamond, to enable fabrication of high speed and high power devices. Engineered structures of single crystal films of diamond and other wide band gap semiconductors will enable devices to be built which are customized for specific applications.