DESIGN AND DEVELOPMENT OF LOW NOISE HIGH SPEED HIGH ELECTRON MOBILITY TRANSISTORS (HEMT)

THIS PROPOSAL DISCUSSES A PROGRAM TO DESIGN AND DEVELOP LOW NOISE, HIGH SPEED HIGH ELECTRON MOBILITY TRANSISTORS (HEMT). THE MATERIAL SYSTEM WILL BE INALAS/INGAAS ON INP AS THIS TECHNOLOGY PROMISES TO BE THE VEHICLE FOR HIGH SPEED INTEGRATED CIRCUITS. THE OBJECTIVE OF THE PROGRAM IS TO DESIGN THE DEVICES SUCH THAT THEY CAN BE FABRICATED AT LOW COST. THIS WILL BE ACCOMPLISHED THROUGH OPTIMIZATION USING NUMERICAL SIMULATION, PRIOR TO FABRICATION. IN ADDITION, WHEN COST EFFECTIVE PROCESS MODIFICATIONS ARE MADE, THEIR EFFECTS WILL BE FIRST STUDIED USING SIMULATION IN ORDER TO REDUCE THE COSTLY ITERATIONS. THE SIMULATION WILL BE CARRIED OUT USING A SUCCESSFUL MODEL PREVIOUSLY USED FOR HETEROSTRUCTURE DEVICES AND THE PERMEABLE BASE TRANSISTORS.