ELECTROLUMINESCENCE OF AMORPHOUS SILICON-CARBIDE ALLOYS

AMORPHOUS SILICON-CARBIDE MATERIALS ARE PROPOSED TO BE INCORPORATED INTO ELECTROLUMINESCENT THIN-FILM DEVICES. THESE MATERIALS, DUE TO THEIR NON-CONSERVED MOMENTUM TRANSITIONS OFFER HIGH LUMINESCENCE EFFICIENCIES, AND VARIABLE EMISSION WAVELENGTHS, DEPENDING ON THE CARBON CONTENT OF A-SI1-XCX:H. AT LEAST TWO DEPOSITIONMETHODS, RF GLOW DISCHARGE DEPOSITION AND PHOTO-CVD, ARE TO BE USED TO COMPARE TWO TYPES OF ELECTROLUMINESCENT STRUCTURES, AC-DRIVEN INSULATOR/A-SI1-XCX:H/INSULATOR DEVICES AND FORWARD-BIAS DRIVEN P-I-N LIGHT-EMITTING DIODES. THESE DEPOSITION METHODS ARE SUITABLE FOR BOTH INSULATOR AND AMORPHOUS SILICON-CARBIDE LAYERS, AS WELL AS FOR N AND P-DOPED LAYERS. COMPARED TO CONVENTIONAL LARGE-AREA THIN-FILM ELECTROLUMINESCENT DEVICES, THE PREPARATION CAN THUS BE INTEGRATED INTO ONE TECHNIQUE, AND HENCE SIGNIFICANTLY REDUCE COST.