High Speed Superconducting Random Access Memory (RAM)

SMI proposes to develop a high speed Superconducting Random Access Memory (RAM) in NbN operating at 10 degrees K with an access time well below 1 nano seconds and a density in the tens of Kbit range. Its innovation lies in the fact that no other memories with such speed and density are currently available. Such memory will be needed as data buffers in critical high speed signal processing and switching functior The Phase I of this project will assess the requirements for memory suitable for communications systems insertion, define an architecture, and quantify the preliminar) design via circuit simulations. The memory defined in Phase I will be fabricated in Phase II. The superconducting memory will have wide commerical applications where fast access time is needed. For example, the memory together with a high-capacity switch can significantly reduce the serious traffic jam problems currently encountered on the Internet. It can also serve as data buffers in high speed computing and communication functions.