Bilayer 157nm Bottom Anti-Reflective Coatings

This SBIR Phase I will develop novel chemistry platforms for 157nm bottom anti-reflective coatings (BARC's). Recent improvements in BARC's, photoresist's, and optical processes at deep ultra-violet have enabled resolution targets approaching 0.12 microns.The semiconductor industry technology roadmap calls for the introduction of 193nm processes to 0.07 microns, and BARC's are essential in achieving this resolution target. Beyond 0.07 microns, stringent BARC product and process performance requirements at157nm will require improved optical performance, planarization of substrate topography, and etch rate/selectivity versus photoresist. In the proposed Phase I work, bilayer BARC chemistries based upon silicon oxide or organo-titanium polymer top layers, inconjunction with a thick absorbing bottom layer, will be developed and characterized for chemical and process performance. In this system, the top layer will act as a mask for transferring the photoresist pattern through the thick bottom layer and intothe substrate by plasma etching. Resolution, control of critical dimensions in photolithography, and the ability to control via-first dual damascene processes will be improved using the bilayer BARC system. The Phase I and II program objectives are tomeet the aggressive performance requirements and industry timelines for new commercial 157nm BARC materials into the R&D phase by 2003.The development of novel bilayer anti-reflective coatings at 157nm will enable semiconductor manufacturers to meet aggressive optical lithography targets of < 0.70 microns in integrated circuit devices. This enabling research will result in microprocessorand memory computer chips that: are able to process more information with increased speed, are more robust with improved shelf life, and are more cost effective to both government and commercial sectors.